Invention Grant
- Patent Title: Semiconductor device, fabrication process, and electronic device
- Patent Title (中): 半导体器件,制造工艺和电子器件
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Application No.: US13412256Application Date: 2012-03-05
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Publication No.: US08736027B2Publication Date: 2014-05-27
- Inventor: Masaya Nagata
- Applicant: Masaya Nagata
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-054389 20110311
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A semiconductor device includes: a semiconductor substrate that includes a semiconductor; an electrode layer formed on a first surface side inside the semiconductor substrate; a frame layer laminated on the first surface of the semiconductor substrate; a conductor layer formed in an aperture portion formed by processing the semiconductor substrate and the frame layer in such a manner as to expose the electrode layer on the first surface of the semiconductor substrate; a vertical hole formed through the semiconductor substrate from a second surface of the semiconductor substrate to the conductor layer; and a wiring layer that is electrically connected to the electrode layer via the conductor layer at an end portion of the vertical hole, and that extends to the second surface of the semiconductor substrate.
Public/Granted literature
- US20120228746A1 SEMICONDUCTOR DEVICE, FABRICATION PROCESS, AND ELECTRONIC DEVICE Public/Granted day:2012-09-13
Information query
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