Invention Grant
- Patent Title: Methods and layers for metallization
- Patent Title (中): 用于金属化的方法和层
-
Application No.: US13409547Application Date: 2012-03-01
-
Publication No.: US08736055B2Publication Date: 2014-05-27
- Inventor: Artur Kolics , Nalla Praveen
- Applicant: Artur Kolics , Nalla Praveen
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
One aspect of the present invention is a method of making an electronic device. According to one embodiment, the method comprises depositing a cap layer containing at least one dopant onto a gapfill metal and annealing so that the at least one dopant migrates to grain boundaries and/or interfaces of the gapfill metal. Another aspect of the present invention is an electronic device.
Public/Granted literature
- US20130228923A1 METHODS AND LAYERS FOR METALLIZATION Public/Granted day:2013-09-05
Information query
IPC分类:
