Invention Grant
- Patent Title: Substrate and manufacturing method therefor
- Patent Title (中): 基板及其制造方法
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Application No.: US12734560Application Date: 2008-11-26
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Publication No.: US08736057B2Publication Date: 2014-05-27
- Inventor: Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
- Applicant: Junichi Ito , Atsushi Yabe , Junnosuke Sekiguchi , Toru Imori
- Applicant Address: JP Tokyo
- Assignee: Nippon Mining & Metals Co., Ltd.
- Current Assignee: Nippon Mining & Metals Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Flynn, Thiel, Boutell & Tanis, P.C.
- Priority: JP2007-324684 20071217
- International Application: PCT/JP2008/071452 WO 20081126
- International Announcement: WO2009/078254 WO 20090625
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A substrate having, on a base material, a barrier film for preventing copper diffusion containing one or more metal elements selected from tungsten, molybdenum and niobium, a metal element having a catalytic function in electroless plating such as platinum, gold, silver and palladium, and nitrogen contained in the form of a nitride of the aforementioned one or more metal elements selected from tungsten, molybdenum and niobium. The barrier film for preventing copper diffusion is manufactured by sputtering in a nitrogen atmosphere using a target containing one or more metal elements selected from tungsten, molybdenum and niobium and the aforementioned metal element having a catalytic function in electroless plating.
Public/Granted literature
- US20100244258A1 SUBSTRATE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2010-09-30
Information query
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