Invention Grant
- Patent Title: Low-resistance conductive pattern structures and methods of fabricating the same
- Patent Title (中): 低电阻导电图案结构及其制造方法
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Application No.: US12910356Application Date: 2010-10-22
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Publication No.: US08736058B2Publication Date: 2014-05-27
- Inventor: Byoung-Ho Kwon , Bo-Un Yoon
- Applicant: Byoung-Ho Kwon , Bo-Un Yoon
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Corporation
- Current Assignee: Samsung Electronics Corporation
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2009-0103634 20091029
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/28 ; H01L29/40

Abstract:
A conductive structure includes a contact plug extending through an insulating layer on a substrate, and first and second conductive lines extending alongside one another on the insulating layer. The first conductive line extends on the contact plug. A connecting line on the insulating layer extends between and electrically connects the first and second conductive lines. Related integrated circuit devices and fabrication methods are also discussed.
Public/Granted literature
- US20110100693A1 LOW-RESISTANCE CONDUCTIVE PATTERN STRUCTURES AND METHODS OF FABRICATING THE SAME Public/Granted day:2011-05-05
Information query
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