Invention Grant
- Patent Title: Pad sidewall spacers and method of making pad sidewall spacers
- Patent Title (中): 衬垫侧壁间隔件和制造衬垫侧壁间隔件的方法
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Application No.: US13587816Application Date: 2012-08-16
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Publication No.: US08736062B2Publication Date: 2014-05-27
- Inventor: Johann Gatterbauer
- Applicant: Johann Gatterbauer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L23/48 ; H01L23/52

Abstract:
A method of making contact pad sidewall spacer and pad sidewall spacers are disclosed. An embodiment includes forming a plurality of contact pads on a substrate, each contact pad having sidewalls, forming a first photoresist over the substrate, and removing the first photoresist from the substrate thereby forming sidewall spacers along the sidewalls of the plurality of the contact pads.
Public/Granted literature
- US20140048958A1 Pad Sidewall Spacers and Method of Making Pad Sidewall Spacers Public/Granted day:2014-02-20
Information query
IPC分类: