Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13908706Application Date: 2013-06-03
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Publication No.: US08736063B2Publication Date: 2014-05-27
- Inventor: Yorio Takada , Kazuteru Ishizuka
- Applicant: Elpida Memory, Inc.
- Priority: JP2008-279865 20081030
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
To provide a semiconductor device comprising a first layer that is provided on a semiconductor substrate and includes a first wiring pattern planarized by CMP and a plurality of first dummy patterns made of a same material as the first wiring pattern and a second layer that is provided above the semiconductor substrate and includes a second wiring pattern planarized by CMP and a plurality of second dummy patterns made of a same material as the second wiring pattern. A central axis of each of the second dummy patterns coincides with that of a corresponding one of the first dummy patterns in a direction perpendicular to the semiconductor substrate.
Public/Granted literature
- US20130264715A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-10-10
Information query
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