Invention Grant
- Patent Title: Semiconductor device having a pad
- Patent Title (中): 具有垫的半导体器件
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Application No.: US13191818Application Date: 2011-07-27
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Publication No.: US08736067B2Publication Date: 2014-05-27
- Inventor: Hiroshige Hirano , Yukitoshi Ota , Yutaka Itoh
- Applicant: Hiroshige Hirano , Yukitoshi Ota , Yutaka Itoh
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-173435 20100802
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/485

Abstract:
A semiconductor device includes: a first insulating film formed on a substrate; a pad embedded in the first insulating film; and a second insulating film that is formed on the first insulating film and has an opening exposing at least part of the pad. The pad includes a plurality of pad interconnects, and an interconnect link is provided to electrically connect adjacent interconnects among the plurality of pad interconnects. The width of the pad interconnects is smaller than the height of the pad interconnects and larger than the width of the interconnect link.
Public/Granted literature
- US20120025394A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-02-02
Information query
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