Invention Grant
- Patent Title: Semiconductor component comprising copper metallizations
- Patent Title (中): 包括铜金属化的半导体部件
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Application No.: US14054749Application Date: 2013-10-15
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Publication No.: US08736070B2Publication Date: 2014-05-27
- Inventor: Matthias Stecher
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: SpryIP, LLC
- Priority: DE102007046556 20070928
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor component having improved thermomechanical durability has in a semiconductor substrate at least one cell comprising a first main electrode zone, a second main electrode zone and a control electrode zone lying in between. For making contact with the main electrode zone, at least one metallization layer composed of copper or a copper alloy is provided which is connected to at least one bonding electrode which likewise comprises copper or a copper alloy.
Public/Granted literature
- US20140042631A1 SEMICONDUCTOR COMPONENT COMPRISING COPPER METALLIZATIONS Public/Granted day:2014-02-13
Information query
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