Invention Grant
- Patent Title: Wafer level hermetic bond using metal alloy with keeper layer
- Patent Title (中): 晶圆级密封使用金属合金与保持层
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Application No.: US13573201Application Date: 2012-08-30
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Publication No.: US08736081B2Publication Date: 2014-05-27
- Inventor: John S. Foster , Christopher S. Gudeman , Alok Paranjpye , Jaquelin K. Spong , Douglas L. Thompson
- Applicant: John S. Foster , Christopher S. Gudeman , Alok Paranjpye , Jaquelin K. Spong , Douglas L. Thompson
- Applicant Address: US CA Goleta
- Assignee: Innovative Micro Technology
- Current Assignee: Innovative Micro Technology
- Current Assignee Address: US CA Goleta
- Agent Jaquelin K. Spong
- Main IPC: H01L23/28
- IPC: H01L23/28
Abstract:
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate. At least one of the substrates may include a raised feature formed under at least one of the metal layers. The two metals may for an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. This alloy may have advantageous features in terms of density, mechanical, electrical or physical properties that may improve the hermeticity of the seal, for example.
Public/Granted literature
- US20120319303A1 Wafer level hermetic bond using metal alloy with keeper layer Public/Granted day:2012-12-20
Information query
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