Invention Grant
- Patent Title: Stacked semiconductor apparatus with configurable vertical I/O
- Patent Title (中): 具有可配置垂直I / O的堆叠半导体器件
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Application No.: US13163884Application Date: 2011-06-20
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Publication No.: US08736296B2Publication Date: 2014-05-27
- Inventor: Hoe ju Chung , Jung bae Lee , Hoon Lee
- Applicant: Hoe ju Chung , Jung bae Lee , Hoon Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0099807 20071004
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66 ; H01L25/065 ; H01L25/18

Abstract:
The present invention provides an apparatus including a stacked plurality of devices and a related method. The apparatus includes a stacked plurality of devices including a master device and at least one secondary device; a plurality of segments, each segment being associated with one of the stacked plurality of devices; and a plurality of N vertical connection paths traversing the stacked plurality of devices. The apparatus further includes a plurality of M vertical signal paths configured from the plurality of N vertical connections paths, wherein M is less than N, and at least one of the plurality of M vertical signal paths is a merged vertical signal path adaptively configured by the master device using at least one segment from each one of at least two of the plurality of N vertical connection paths.
Public/Granted literature
- US20110248740A1 STACKED SEMICONDUCTOR APPARATUS WITH CONFIGURABLE VERTICAL I/O Public/Granted day:2011-10-13
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