Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13788476Application Date: 2013-03-07
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Publication No.: US08736311B2Publication Date: 2014-05-27
- Inventor: Ryo Fukuda , Masaru Koyanagi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-134823 20100614
- Main IPC: H03K5/22
- IPC: H03K5/22

Abstract:
A constant current source circuit includes one end connected to a second node as sources of third and fourth transistors, and the other end connected to a second power supply node that supplies a second voltage different from a first voltage. The clamp circuit is configured to form a current path between the second node and the second power supply node. It adjusts the potential of the second node to a certain potential when a first external input signal is switched from a first state to a second state.
Public/Granted literature
- US20130181764A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2013-07-18
Information query
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