Invention Grant
US08736314B2 Leakage power management using programmable power gating transistors and on-chip aging and temperature tracking circuit
有权
漏电功率管理采用可编程电源门控晶体管和片上老化和温度跟踪电路
- Patent Title: Leakage power management using programmable power gating transistors and on-chip aging and temperature tracking circuit
- Patent Title (中): 漏电功率管理采用可编程电源门控晶体管和片上老化和温度跟踪电路
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Application No.: US13053374Application Date: 2011-03-22
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Publication No.: US08736314B2Publication Date: 2014-05-27
- Inventor: Nam Sung Kim
- Applicant: Nam Sung Kim
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Boyle Fredrickson, S.C.
- Main IPC: H03K3/00
- IPC: H03K3/00
Abstract:
The number of power-gating transistors on an integrated circuit used for power reduction in a sleep mode is controlled during a wake state to adjust the current flow and hence voltage drop across the power-gating transistors as a function of aging of these transistors and/or a function of temperature of the integrated circuit. In this way, the supply voltage to the integrated circuit may be better tailored to minimize current leakage when the integrated circuit is young or operating at low temperatures.
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