Invention Grant
- Patent Title: Negative charge pump
- Patent Title (中): 负电荷泵
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Application No.: US13005643Application Date: 2011-01-13
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Publication No.: US08736351B2Publication Date: 2014-05-27
- Inventor: Tien-Chun Yang , Yvonne Lin , Ming-Chieh Huang
- Applicant: Tien-Chun Yang , Yvonne Lin , Ming-Chieh Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A charge pump includes a first node configured to receive a first voltage and a second node coupled to the first node through a first transistor. The second node is configured to output a voltage having a greater voltage magnitude than the first voltage. A first capacitor is coupled to a third node, and a fourth node is configured to receive a first clock signal. The third node is disposed between a drain of the first transistor and the fourth node. A leaky circuit device is coupled in parallel with the first capacitor for draining charges of a first polarity away from the second node.
Public/Granted literature
- US20120182058A1 NEGATIVE CHARGE PUMP Public/Granted day:2012-07-19
Information query
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