Invention Grant
- Patent Title: Power amplifier module having bias circuit
- Patent Title (中): 功率放大器模块具有偏置电路
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Application No.: US13444491Application Date: 2012-04-11
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Publication No.: US08736376B2Publication Date: 2014-05-27
- Inventor: Gyu Suck Kim , Yoo Sam Na
- Applicant: Gyu Suck Kim , Yoo Sam Na
- Applicant Address: KR Suwon, Gyeonggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyeonggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2011-0096167 20110923
- Main IPC: H03F3/21
- IPC: H03F3/21

Abstract:
There is provided a power amplifier module having a bias circuit, in which a bias power is supplied to an amplifier by differently setting an impedance between an input signal terminal and a reference power terminal and an impedance between the input signal terminal and a ground. The power amplifier module includes: an amplifier unit receiving a bias power to amplify an input signal; and a bias unit supplying the bias power to the amplifier, by differently setting an impedance between an input signal terminal transmitting the input signal therethrough and a reference power terminal transmitting a reference power having a predetermined voltage level and an impedance between the input signal terminal and a ground.
Public/Granted literature
- US20130076447A1 POWER AMPLIFIER MODULE HAVING BIAS CIRCUIT Public/Granted day:2013-03-28
Information query
IPC分类: