Invention Grant
US08736823B2 Methods and processes for optical interferometric or holographic test in the development, evaluation, and manufacture of semiconductor and free-metal devices utilizing anisotropic and isotropic materials
有权
在利用各向异性和各向同性物质的半导体和自由金属器件的开发,评估和制造中的光学干涉或全息测试的方法和过程
- Patent Title: Methods and processes for optical interferometric or holographic test in the development, evaluation, and manufacture of semiconductor and free-metal devices utilizing anisotropic and isotropic materials
- Patent Title (中): 在利用各向异性和各向同性物质的半导体和自由金属器件的开发,评估和制造中的光学干涉或全息测试的方法和过程
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Application No.: US13786176Application Date: 2013-03-05
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Publication No.: US08736823B2Publication Date: 2014-05-27
- Inventor: Paul L. Pfaff
- Applicant: Paul L. Pfaff
- Applicant Address: US OR Lake Oswego
- Assignee: Attofemto, Inc.
- Current Assignee: Attofemto, Inc.
- Current Assignee Address: US OR Lake Oswego
- Agency: Davis Wright Tremaine LLP
- Agent George C. Rondeau, Jr.
- Main IPC: G01L1/24
- IPC: G01L1/24 ; G01B9/02

Abstract:
Analysis and characterization of semiconductor and free-metal devices using a plurality of “live” and stored interference patterns or data detected to determine or generate two-dimensional or three-dimensional information of at least one internal stress or signal, or determining the effects thereof of internal or external stresses acting upon or within the electrical signals applied to a device under test or evaluation having exterior surfaces, interior structures, electronic features as well as determining the effects thereof of chemicals, bioelectric materials, or substances, placed adjacent to the surface of the devices under test.
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