A device for providing electrostatic discharge (ESD) protection is described which includes a silicon controlled rectifier (SCR), a mechanism for triggering the SCR, and a pair of contact regions of opposing conductivity type distinct from regions of the SCR that are interposed between the cathodic and anodic regions of the SCR. The contact regions are configured to collect charge generated by the SCR. In some embodiments, the device may include a transistor and the cathodic region of the SCR may dually serve as a source contact region of the transistor. A circuit is described which includes an ESD protection device coupled between high and low voltage power supply bus bars, wherein the ESD protection device includes an SCR as well as a pair of contact regions of opposing conductivity type distinct from the SCR and interposed between the cathodic and anodic regions of the SCR.