Invention Grant
- Patent Title: Integrated circuit and integrated circuit package
- Patent Title (中): 集成电路和集成电路封装
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Application No.: US13318158Application Date: 2009-05-14
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Publication No.: US08737029B2Publication Date: 2014-05-27
- Inventor: Sergey Sofer , Yefim-Haim Fefer , Dov Tzytkin
- Applicant: Sergey Sofer , Yefim-Haim Fefer , Dov Tzytkin
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2009/052022 WO 20090514
- International Announcement: WO2010/131078 WO 20101118
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
An integrated circuit, comprises a power supply node being connectable to a voltage supply (Vdd); a ground node connectable to ground (GND); and an electrostatic discharge protection structure for diverting an electrostatic discharge away from protected parts of the integrated circuit. A gated domain is present which is supply gated and/or ground gated with respect to the power supply node and/or the ground node, as well as a gating switch for gating the gated domain relative to the power supply node and/or the ground node. The gating switch enables in a connecting state, and in a disconnecting state inhibits, an electrical connection between the gated domain and at least one of: the power supply node and the ground node. The integrated circuit includes ESD gating control circuitry for controlling in case of an electrostatic discharge event the gated domain to be electrically connected to the power supply node and/or the ground node.
Public/Granted literature
- US20120050926A1 INTEGRATED CIRCUIT AND INTEGRATED CIRCUIT PACKAGE Public/Granted day:2012-03-01
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