Invention Grant
- Patent Title: Cover structure and manufacturing method thereof
- Patent Title (中): 盖结构及其制造方法
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Application No.: US13196915Application Date: 2011-08-03
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Publication No.: US08737081B2Publication Date: 2014-05-27
- Inventor: Chien-Ming Chen
- Applicant: Chien-Ming Chen
- Applicant Address: TW Hsinchu County
- Assignee: Subtron Technology Co., Ltd.
- Current Assignee: Subtron Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu County
- Agency: Jianq Chyun IP Office
- Priority: TW100116692A 20110512
- Main IPC: H05K1/00
- IPC: H05K1/00

Abstract:
A method of manufacturing a cover structure is provided. A first insulating layer is provided. The first insulating layer has a first surface and a second surface opposite to each other. A second insulating layer is provided. The second insulating layer has a third surface and a fourth surface opposite to each other and an opening passing through the third surface and the fourth surface. A thickness of the second insulating layer is greater than a thickness of the first insulating layer. The first insulating layer and the second insulating layer are laminated to each other, so that the third surface of the second insulating layer connects to the second surface of the first insulating layer. A cavity is defined by the opening of the second insulating layer and the first insulating layer. A metal layer is formed on the cavity.
Public/Granted literature
- US20120285719A1 COVER STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-11-15
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