Invention Grant
US08737110B2 Large array of upward pointing P-I-N diodes having large and uniform current
有权
大的向上指向的P-I-N二极管阵列具有大且均匀的电流
- Patent Title: Large array of upward pointing P-I-N diodes having large and uniform current
- Patent Title (中): 大的向上指向的P-I-N二极管阵列具有大且均匀的电流
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Application No.: US13863027Application Date: 2013-04-15
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Publication No.: US08737110B2Publication Date: 2014-05-27
- Inventor: Scott Brad Herner
- Applicant: SanDisk 3D LLC
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C17/06
- IPC: G11C17/06
Abstract:
A circuit is provided that includes a plurality of vertically oriented p-i-n diodes. Each p-i-n diode includes a bottom heavily doped p-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.
Public/Granted literature
- US20130228738A1 LARGE ARRAY OF UPWARD POINTING P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT Public/Granted day:2013-09-05
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