Invention Grant
US08737133B2 Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
有权
基于固态，非易失性存储单元的分组来移动电池电压
- Patent Title: Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
- Patent Title (中): 基于固态，非易失性存储单元的分组来移动电池电压
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Application No.: US13275675Application Date: 2011-10-18
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Publication No.: US08737133B2Publication Date: 2014-05-27
- Inventor: Arvind Sridharan , Ara Patapoutian
- Applicant: Arvind Sridharan , Ara Patapoutian
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells. Based on cell counts within the groups, it can be determined that a shift in a reference voltage will reduce a collective bit error rate of the cells. The shift can be applied to data access operations affecting the cells.
Public/Granted literature
- US20130094290A1 SHIFTING CELL VOLTAGE BASED ON GROUPING OF SOLID-STATE, NON-VOLATILE MEMORY CELLS Public/Granted day:2013-04-18
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