Disclosed is an apparatus and method for determining a read level voltage to apply to a block of memory cells in a non-volatile memory circuit. A prediction value is compared to a prediction indicator to determine whether a new read level voltage to be applied to read the memory cells should be estimated. If a new read level should be estimated the new read level is calculated as a function of an initial read level and a dwell time and a number of program/erase cycles. A controller provides one or more programming commands representative of the new read level voltage to the memory circuit to read the cells.