Invention Grant
- Patent Title: Semiconductor memory device for transferring data at high speed
- Patent Title (中): 用于高速传输数据的半导体存储器件
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Application No.: US13406428Application Date: 2012-02-27
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Publication No.: US08737145B2Publication Date: 2014-05-27
- Inventor: Ji-Hyae Bae , Sang-Sik Yoon
- Applicant: Ji-Hyae Bae , Sang-Sik Yoon
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff Taylor & Zafman
- Priority: KR10-2007-0088871 20070903
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A semiconductor memory device includes: a data multiplexing unit configured to output one of a data training pattern and data transferred through a first global input/output line in response to a training control signal; and a latch unit configured to latch an output of the data multiplexing unit to apply and maintain the latched output to a second global input/output line.
Public/Granted literature
- US20120210079A1 SEMICONDUCTOR MEMORY DEVICE FOR TRANSFERRING DATA AT HIGH SPEED Public/Granted day:2012-08-16
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