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US08737150B2 Semiconductor device and production method thereof 有权
半导体装置及其制造方法

  • Patent Title: Semiconductor device and production method thereof
  • Patent Title (中): 半导体装置及其制造方法
  • Application No.: US13407668
    Application Date: 2012-02-28
  • Publication No.: US08737150B2
    Publication Date: 2014-05-27
  • Inventor: Yoko Mochida
  • Applicant: Yoko Mochida
  • Agency: McGinn IP Law Group, PLLC
  • Priority: JP2011-044190 20110301; JP2011-278125 20111220; JP2012-016104 20120130
  • Main IPC: G11C29/00
  • IPC: G11C29/00
Semiconductor device and production method thereof
Abstract:
A semiconductor device includes a differential circuit and a power supply circuit that provides a power supply to the differential circuit. Current to be supplied to the differential circuit by the power supply circuit is controlled, based on logics of a burn-in mode signal and an activation control signal for the differential circuit.
Abstract(Chinese):

半导体器件包括差分电路和向差分电路提供电源的电源电路。 基于老化模式信号和差动电路的启动控制信号的逻辑，控制由电源电路提供给差分电路的电流。

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