Invention Grant
- Patent Title: Micromachined inertial sensor devices
- Patent Title (中): 微加工惯性传感器装置
-
Application No.: US12849742Application Date: 2010-08-03
-
Publication No.: US08739626B2Publication Date: 2014-06-03
- Inventor: Cenk Acar
- Applicant: Cenk Acar
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G01C19/56
- IPC: G01C19/56
Abstract:
A micromachined inertial sensor with a single proof-mass for measuring 6-degree-of-motions. The single proof-mass includes a frame, an x-axis proof mass section attached to the frame by a first flexure, and a y-axis proof mass section attached to the frame by a second flexure. The single proof-mass is formed in a micromachined structural layer and is adapted to measure angular rates about three axes with a single drive motion and linear accelerations about the three axes.
Public/Granted literature
- US20110030473A1 MICROMACHINED INERTIAL SENSOR DEVICES Public/Granted day:2011-02-10
Information query
