Invention Grant
- Patent Title: Inertial sensor
- Patent Title (中): 惯性传感器
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Application No.: US13165436Application Date: 2011-06-21
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Publication No.: US08739628B2Publication Date: 2014-06-03
- Inventor: Jong Woon Kim , Liwei Lin , Minyao Mao , Heung Woo Park
- Applicant: Jong Woon Kim , Liwei Lin , Minyao Mao , Heung Woo Park
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd
- Current Assignee: Samsung Electro-Mechanics Co., Ltd
- Current Assignee Address: KR Gyunggi-Do
- Agency: Ladas & Parry, LLP
- Priority: KR10-2010-0128538 20101215
- Main IPC: G01P15/08
- IPC: G01P15/08

Abstract:
An inertial sensor includes a plate-like substrate layer, a mass body, a support frame, a limit stop extending in the central direction of the mass body from the support frame, and a detection unit detecting the displacement of the displacement part. The inertial sensor adopts the limit stop limiting the downward displacement of the mass body to prevent the support portion of the mass body from being damaged.
Public/Granted literature
- US20120152020A1 INERTIAL SENSOR Public/Granted day:2012-06-21
Information query
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