Invention Grant
US08739632B2 Pressure sensor structure and associated method of making a pressure sensor
有权
压力传感器结构及其制作压力传感器的相关方法
- Patent Title: Pressure sensor structure and associated method of making a pressure sensor
- Patent Title (中): 压力传感器结构及其制作压力传感器的相关方法
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Application No.: US13355149Application Date: 2012-01-20
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Publication No.: US08739632B2Publication Date: 2014-06-03
- Inventor: Shih-Shian Ho , Srihari Rajgopal , Mehran Mehregany
- Applicant: Shih-Shian Ho , Srihari Rajgopal , Mehran Mehregany
- Applicant Address: US OH Cleveland
- Assignee: Case Western Reserve University
- Current Assignee: Case Western Reserve University
- Current Assignee Address: US OH Cleveland
- Agency: Tarolli, Sundheim, Covell & Tummino LLP
- Main IPC: G01L9/12
- IPC: G01L9/12 ; G01L9/00

Abstract:
A pressure sensor can include a diaphragm plate of an electrically conductive material, the diaphragm plate including substantially planar opposed first and second surfaces. A layer of a dielectric material can be provided at the first surface of the diaphragm plate along a periphery thereof such that a flexion region of the first surface is substantially free of the dielectric material. The dielectric layer can be configured to engage a fixed structure within a housing to support the flexion region as to enable deflection thereof relative to the fixed structure that changes an electrical characteristic of the pressure sensor in response to application of force at the second surface of the diaphragm plate.
Public/Granted literature
- US20120204652A1 PRESSURE SENSOR STRUCTURE AND ASSOCIATED METHOD OF MAKING A PRESSURE SENSOR Public/Granted day:2012-08-16
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