Invention Grant
- Patent Title: Method for making low stress PDC
- Patent Title (中): 低应力PDC的方法
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Application No.: US13241877Application Date: 2011-09-23
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Publication No.: US08741010B2Publication Date: 2014-06-03
- Inventor: Robert Frushour
- Applicant: Robert Frushour
- Agency: Young, Basile, Hanlon & MacFarlane, P.C.
- Main IPC: B24D18/00
- IPC: B24D18/00

Abstract:
A method for making PDC with excellent abrasion resistance at high pressure in a single HPHT step without introducing high residual internal stress. In one aspect of the method, the diamond mass is subjected to an initial high pressure to compact the mass. The initial pressure is then lowered to a second pressure prior to the application of heat to the reaction cell. In another aspect, the diamond mass is subjected to an initial pressure to compact the mass, followed by raising the temperature to melt the sintering aid. The initial pressure is then lowered to a second pressure prior to lowering the temperature below the melting point of the sintering aid.
Public/Granted literature
- US20120272582A1 METHOD FOR MAKING LOW STRESS PDC Public/Granted day:2012-11-01
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