Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
-
Application No.: US13172366Application Date: 2011-06-29
-
Publication No.: US08741065B2Publication Date: 2014-06-03
- Inventor: Masaya Odagiri , Yusuke Muraki , Jin Fujihara
- Applicant: Masaya Odagiri , Yusuke Muraki , Jin Fujihara
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2010-149656 20100630
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00 ; C23C16/50

Abstract:
A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.
Public/Granted literature
- US20120000629A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2012-01-05
Information query