Invention Grant
- Patent Title: Semiconductor processing method
- Patent Title (中): 半导体加工方法
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Application No.: US12811449Application Date: 2008-01-09
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Publication No.: US08741071B2Publication Date: 2014-06-03
- Inventor: Tony Vessa
- Applicant: Tony Vessa
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2008/051269 WO 20080109
- International Announcement: WO2009/087492 WO 20090716
- Main IPC: B08B3/00
- IPC: B08B3/00 ; H01L21/00 ; H01L21/02 ; H01L21/31 ; H01L21/311 ; H01L21/67 ; B08B3/08
Abstract:
A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.
Public/Granted literature
- US20100275951A1 SEMICONDUCTOR PROCESSING METHOD Public/Granted day:2010-11-04
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