Invention Grant
- Patent Title: Method and device for full wafer nanoimprint lithography
- Patent Title (中): 全晶圆纳米压印光刻的方法和装置
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Application No.: US13521811Application Date: 2011-05-23
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Publication No.: US08741199B2Publication Date: 2014-06-03
- Inventor: Hongbo Lan , Yucheng Ding
- Applicant: Hongbo Lan , Yucheng Ding
- Applicant Address: CN Qingdao
- Assignee: Qingdao Technological University
- Current Assignee: Qingdao Technological University
- Current Assignee Address: CN Qingdao
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: CN201010600735 20101222; CN201020673702 20101222
- International Application: PCT/CN2011/000878 WO 20110523
- International Announcement: WO2012/083578 WO 20120628
- Main IPC: B29C33/46
- IPC: B29C33/46

Abstract:
The present application relates to a full wafer nanoimprint lithography device comprises a wafer stage, a full wafer coated with a liquid resist, a demolding nozzle, a composite mold, an imprint head, a pressure passageway, a vacuum passageway and a UV light source. The present application also relates to an imprinting method using the full wafer nanoimprint lithography device comprises the following steps: 1) a pretreatment process; 2) an imprinting process; 3) a curing process; and 4) a demolding process. The device and the method can be used for high volume manufacturing photonic crystal LEDs, nano patterned sapphire substrates and the like in large scale patterning on the non-planar surface or substrate.
Public/Granted literature
- US20120299222A1 METHOD AND DEVICE FOR FULL WAFER NANOIMPRINT LITHOGRAPHY Public/Granted day:2012-11-29
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