Invention Grant
US08741199B2 Method and device for full wafer nanoimprint lithography 有权
全晶圆纳米压印光刻的方法和装置

Method and device for full wafer nanoimprint lithography
Abstract:
The present application relates to a full wafer nanoimprint lithography device comprises a wafer stage, a full wafer coated with a liquid resist, a demolding nozzle, a composite mold, an imprint head, a pressure passageway, a vacuum passageway and a UV light source. The present application also relates to an imprinting method using the full wafer nanoimprint lithography device comprises the following steps: 1) a pretreatment process; 2) an imprinting process; 3) a curing process; and 4) a demolding process. The device and the method can be used for high volume manufacturing photonic crystal LEDs, nano patterned sapphire substrates and the like in large scale patterning on the non-planar surface or substrate.
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