Invention Grant
- Patent Title: Determination of lithography tool process condition
- Patent Title (中): 光刻工具工艺条件的确定
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Application No.: US13720879Application Date: 2012-12-19
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Publication No.: US08741511B1Publication Date: 2014-06-03
- Inventor: Wenzhan Zhou , Qun Ying Lin
- Applicant: GlobalFoundries Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Horizon IP Pte Ltd
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method for forming an integrated circuit (IC) is presented. The method includes providing a wafer having a substrate prepared with a photoresist layer. The photoresist layer is processed by passing a radiation from an exposure source of a lithography tool through a mask having a pattern. The process parameters of the lithography tool are determined by performing a pattern matching process. The photoresist layer is developed to transfer the pattern on the mask to the photoresist layer.
Public/Granted literature
- US20140170539A1 DETERMINATION OF LITHOGRAPHY TOOL PROCESS CONDITION Public/Granted day:2014-06-19
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