Invention Grant
- Patent Title: Method for fabricating a through wire interconnect (TWI) on a semiconductor substrate having a bonded connection and an encapsulating polymer layer
- Patent Title (中): 在具有接合连接的半导体衬底和封装聚合物层上制造贯线互连（TWI）的方法
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Application No.: US14050535Application Date: 2013-10-10
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Publication No.: US08741667B2Publication Date: 2014-06-03
- Inventor: David R Hembree , Alan G. Wood
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agent Stephen A. Gratton
- Main IPC: H01L21/60
- IPC: H01L21/60
Abstract:
A method for fabricating a through wire interconnect for a semiconductor substrate having a substrate contact includes the steps of: forming a via through the semiconductor substrate from a first side to a second side thereof; placing a wire in the via having a first end with a bonded connection to the substrate contact and a second end proximate to the second side; forming a first contact on the wire proximate to the first side; forming a second contact on the second end of the wire; and forming a polymer layer on the first side at least partially encapsulating the wire while leaving the first contact exposed.
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Information query
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