Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13619353Application Date: 2012-09-14
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Publication No.: US08741695B2Publication Date: 2014-06-03
- Inventor: Seiji Oka , Kazuhiro Tada , Hiroshi Yoshida
- Applicant: Seiji Oka , Kazuhiro Tada , Hiroshi Yoshida
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2012-005906 20120116
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/495 ; H01L33/48 ; H01L33/56

Abstract:
A semiconductor device includes a metal substrate including a metal base plate, an insulating sheet located on the metal base plate, and a wiring pattern located on the insulating sheet, and a semiconductor element located on the metal substrate. The semiconductor element is sealed with a molding resin. The molding resin extends to side surfaces of the metal substrate. On the side surfaces of the metal substrate, the insulating sheet and the wiring pattern are not exposed from the molding resin, whereas the metal base plate includes a projecting portion exposed from the molding resin.
Public/Granted literature
- US20130181225A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-07-18
Information query
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