Invention Grant
- Patent Title: Fin structure formation including partial spacer removal
- Patent Title (中): 翅片结构形成包括部分间隔物去除
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Application No.: US13585395Application Date: 2012-08-14
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Publication No.: US08741701B2Publication Date: 2014-06-03
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Chun-Chen Yeh
- Applicant: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Chun-Chen Yeh
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/335
- IPC: H01L21/335 ; H01L21/8232
Abstract:
A method of forming a semiconductor device includes forming a mandrel on top of a substrate; forming a first spacer adjacent to the mandrel on top of the substrate; forming a cut mask over the first spacer and the mandrel, such that the first spacer is partially exposed by the cut mask; partially removing the partially exposed first spacer; and etching the substrate to form a fin structure corresponding to the partially removed first spacer in the substrate.
Public/Granted literature
- US20140051247A1 FIN STRUCTURE FORMATION INCLUDING PARTIAL SPACER REMOVAL Public/Granted day:2014-02-20
Information query
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