Invention Grant
- Patent Title: High electron mobility transistor and method of manufacturing the same
- Patent Title (中): 高电子迁移率晶体管及其制造方法
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Application No.: US13944444Application Date: 2013-07-17
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Publication No.: US08741706B2Publication Date: 2014-06-03
- Inventor: Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
- Applicant: Jun-youn Kim , Jae-won Lee , Hyo-ji Choi
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2011-0099234 20110929
- Main IPC: H01L21/18
- IPC: H01L21/18 ; H01L21/302 ; H01L29/66
Abstract:
A high electron mobility transistor (HEMT) includes a substrate, an HEMT stack spaced apart from the substrate, and a pseudo-insulation layer (PIL) disposed between the substrate and the HEMT stack. The PIL layer includes at least two materials having different phases. The PIL layer defines an empty space that is wider at an intermediate portion than at an entrance of the empty space.
Public/Granted literature
- US20130302953A1 HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-11-14
Information query
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