Vertical power MOSFET and IGBT fabrication process with two fewer photomasks

Invention Grant

US08741709B2 Vertical power MOSFET and IGBT fabrication process with two fewer photomasks 有权

Title translation: 垂直功率MOSFET和IGBT制造工艺，具有两个较少的光掩模

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Patent Title: Vertical power MOSFET and IGBT fabrication process with two fewer photomasks
Patent Title (中): 垂直功率MOSFET和IGBT制造工艺，具有两个较少的光掩模
Application No.: US13113797

Application Date: 2011-05-23
Publication No.: US08741709B2

Publication Date: 2014-06-03
Inventor: Kyoung Wook Seok , Jae Yong Choi , Vladimir Tsukanov
Applicant: Kyoung Wook Seok , Jae Yong Choi , Vladimir Tsukanov
Applicant Address: US CA Milpitas
Assignee: IXYS Corporation
Current Assignee: IXYS Corporation
Current Assignee Address: US CA Milpitas
Agency: Imperium Patent Works
Agent Amir V. Adibi
Main IPC: H01L21/8238
IPC: H01L21/8238

Vertical power MOSFET and IGBT fabrication process with two fewer photomasks

Abstract:

A process for fabrication of a power semiconductor device is disclosed in which a single photomask is used to define each of p-conductivity well regions and n-conductivity type source regions. In the process a single photomask is deposited on a layer of polysilicon on a wafer, the polysilicon layer is removed from first regions of the power semiconductor device where the p-conductivity well regions and the n-conductivity type source regions are to be formed, and both p-conductivity type and n-conductivity type dopants are introduced into the wafer through the first regions.

Abstract(Chinese):

公开了一种用于制造功率半导体器件的方法，其中使用单个光掩模来限定p导电阱区域和n导电型源极区域中的每一个。在该过程中，单个光掩模沉积在晶片上的多晶硅层上，从要形成p导电阱区域和n导电型源极区域的功率半导体器件的第一区域去除多晶硅层，并且p导电型和n导电型掺杂剂都通过第一区域引入晶片。

Public/Granted literature

US20110312137A1 Vertical Power MOSFET and IGBT Fabrication Process with Two Fewer Photomasks Public/Granted day:2011-12-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS