Methods for preventing line collapse during the fabrication of NAND flash memory and other microelectronic devices that utilize closely spaced device structures with high aspect ratios are described. In some embodiments, one or more mechanical support structures may be provided to prevent the collapse of closely spaced device structures during fabrication. In one example, during fabrication of a NAND flash memory, one or more mechanical support structures may be set in place prior to performing a high aspect ratio word line etch for forming the NAND strings. The one or more mechanical support structures may comprise one or more fin supports that are arranged in a bit line direction. In another example, the one or more mechanical support structures may be developed during the word line etch for forming the NAND strings.