Invention Grant
US08741726B2 Reacted layer for improving thickness uniformity of strained structures
有权
用于改善应变结构的厚度均匀性的反应层
- Patent Title: Reacted layer for improving thickness uniformity of strained structures
- Patent Title (中): 用于改善应变结构的厚度均匀性的反应层
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Application No.: US13308928Application Date: 2011-12-01
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Publication No.: US08741726B2Publication Date: 2014-06-03
- Inventor: Cheng-Te Lin , Chih-Lin Wang , Yi-Huang Wu , Tzong-Sheng Chang
- Applicant: Cheng-Te Lin , Chih-Lin Wang , Yi-Huang Wu , Tzong-Sheng Chang
- Applicant Address: JP
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: JP
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
Methods are disclosed of forming and removing a reacted layer on a surface of a recess to provide mechanisms for improving thickness uniformity of a semiconductor material formed in the recess. The improved thickness uniformity in turn improves the uniformity of device performance.
Public/Granted literature
- US20130143391A1 REACTED LAYER FOR IMPROVING THICKNESS UNIFORMITY OF STRAINED STRUCTURES Public/Granted day:2013-06-06
Information query
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