Invention Grant
US08741728B2 Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array 有权
二极管访问交叉点电阻式存储器阵列的电路,偏置方案和制造方法

Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
Abstract:
Methods, systems, structures and arrays are disclosed, such as a resistive memory array which includes access devices, for example, back-to-back Zener diodes, that only allow current to pass through a coupled resistive memory cell when a voltage drop applied to the access device is greater than a critical voltage. The array may be biased to reduce standby currents and improve delay times between programming and read operations.
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