Invention Grant
US08741732B2 Forming metal-insulator-metal capacitors over a top metal layer
有权
在顶层金属层上形成金属 - 绝缘体 - 金属电容器
- Patent Title: Forming metal-insulator-metal capacitors over a top metal layer
- Patent Title (中): 在顶层金属层上形成金属 - 绝缘体 - 金属电容器
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Application No.: US14045976Application Date: 2013-10-04
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Publication No.: US08741732B2Publication Date: 2014-06-03
- Inventor: Kun-Mao Wu , Chih-Hsun Lin , Yu-Lung Yeh , Kuan-Chi Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater and Matsil, L.L.P.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/108 ; H01L49/02

Abstract:
A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
Public/Granted literature
- US20140038384A1 Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer Public/Granted day:2014-02-06
Information query
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