Invention Grant
US08741733B2 Stress in trigate devices using complimentary gate fill materials
失效
在使用补充浇口填充材料的三元装置中应力
- Patent Title: Stress in trigate devices using complimentary gate fill materials
- Patent Title (中): 在使用补充浇口填充材料的三元装置中应力
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Application No.: US13750393Application Date: 2013-01-25
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Publication No.: US08741733B2Publication Date: 2014-06-03
- Inventor: Titash Rakshit , Martin Giles , Ravi Pillarisetty , Jack T. Kavalieros
- Applicant: Titash Rakshit , Martin Giles , Ravi Pillarisetty , Jack T. Kavalieros
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.
Public/Granted literature
- US20130143385A1 STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS Public/Granted day:2013-06-06
Information query
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