Invention Grant
US08741738B2 Method of fabrication of a semiconductor apparatus comprising substrates including Al/Ge and Cu contact layers to form a metallic alloy
有权
制造包括Al / Ge和Cu接触层的基板以形成金属合金的半导体装置的制造方法
- Patent Title: Method of fabrication of a semiconductor apparatus comprising substrates including Al/Ge and Cu contact layers to form a metallic alloy
- Patent Title (中): 制造包括Al / Ge和Cu接触层的基板以形成金属合金的半导体装置的制造方法
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Application No.: US13156052Application Date: 2011-06-08
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Publication No.: US08741738B2Publication Date: 2014-06-03
- Inventor: Yi Hsun Chiu , Ting-Ying Chien , Ching-Hou Su , Chyi-Tsong Ni
- Applicant: Yi Hsun Chiu , Ting-Ying Chien , Ching-Hou Su , Chyi-Tsong Ni
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
The disclosure relates to integrated circuit fabrication, and more particularly to a semiconductor apparatus with a metallic alloy. An exemplary structure for an apparatus comprises a first silicon substrate; a second silicon substrate; and a contact connecting each of the first and second substrates, wherein the contact comprises a Ge layer adjacent to the first silicon substrate, a Cu layer adjacent to the second silicon substrate, and a metallic alloy between the Ge layer and Cu layer.
Public/Granted literature
- US20120313246A1 SEMICONDUCTOR APPARATUS Public/Granted day:2012-12-13
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