Invention Grant
- Patent Title: Integrated assist features for epitaxial growth
- Patent Title (中): 用于外延生长的集成辅助功能
-
Application No.: US11650697Application Date: 2007-01-05
-
Publication No.: US08741743B2Publication Date: 2014-06-03
- Inventor: Omar Zia , Nigel Cave , Venkat Kolagunta , Ruiqi Tian , Edward O. Travis
- Applicant: Omar Zia , Nigel Cave , Venkat Kolagunta , Ruiqi Tian , Edward O. Travis
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Jackson Walker L.L.P.
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/762
Abstract:
A method for making a semiconductor device is provided which comprises (a) creating a first mask for the epitaxial growth of features in a semiconductor device, said first mask defining a set of epitaxial tiles (219); (b) creating a second mask for defining the active region of the semiconductor device, said second mask defining a set of active tiles (229); and (c) using the first and second masks to create a semiconductor device.
Public/Granted literature
- US20080166859A1 Integrated assist features for epitaxial growth Public/Granted day:2008-07-10
Information query
IPC分类:
