Invention Grant
US08741748B1 Method to grow group III-nitrides on copper using passivation layers
有权
使用钝化层在铜上生长III族氮化物的方法
- Patent Title: Method to grow group III-nitrides on copper using passivation layers
- Patent Title (中): 使用钝化层在铜上生长III族氮化物的方法
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Application No.: US13836594Application Date: 2013-03-15
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Publication No.: US08741748B1Publication Date: 2014-06-03
- Inventor: Qiming Li , George T. Wang , Jeffrey T. Figiel
- Applicant: Sandia Corporation
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agent Kevin W. Bieg
- Main IPC: H01L21/36
- IPC: H01L21/36
Abstract:
Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.
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