中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US08741755B2 Semiconductor device having gate trench and manufacturing method thereof 有权
具有栅极沟槽的半导体器件及其制造方法

  • Patent Title: Semiconductor device having gate trench and manufacturing method thereof
  • Patent Title (中): 具有栅极沟槽的半导体器件及其制造方法
  • Application No.: US13485282
    Application Date: 2012-05-31
  • Publication No.: US08741755B2
    Publication Date: 2014-06-03
  • Inventor: Wu Nan
  • Applicant: Wu Nan
  • Agency: Young & Thompson
  • Priority: JP2011-123233 20110601
  • Main IPC: H01L21/3205
  • IPC: H01L21/3205 ;  H01L21/4763
Semiconductor device having gate trench and manufacturing method thereof
Abstract:
Disclosed herein is a semiconductor device that includes a trench formed across active regions and the element isolation regions. A conductive film is formed at a lower portion of the trench, and a cap insulating film is formed at an upper portion of the trench. The cap insulating film has substantially the same planer shape as that of the conductive film.
Abstract(Chinese):

本文公开了一种半导体器件，其包括横跨有源区域和元件隔离区域形成的沟槽。 导电膜形成在沟槽的下部，并且在沟槽的上部形成帽绝缘膜。 盖绝缘膜具有与导电膜基本相同的平面形状。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205 ......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
Patent Agency Ranking
0/0