Invention Grant
US08741756B2 Contacts-first self-aligned carbon nanotube transistor with gate-all-around
有权
触点首先自对准碳纳米管晶体管，全栅极
- Patent Title: Contacts-first self-aligned carbon nanotube transistor with gate-all-around
- Patent Title (中): 触点首先自对准碳纳米管晶体管，全栅极
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Application No.: US13584199Application Date: 2012-08-13
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Publication No.: US08741756B2Publication Date: 2014-06-03
- Inventor: Aaron D. Franklin , Shu-jen Han , Joshua T. Smith , Paul M. Solomon
- Applicant: Aaron D. Franklin , Shu-jen Han , Joshua T. Smith , Paul M. Solomon
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first contact by a gap. A portion of the substrate in the gap between the first contact and the second contact is removed.
Public/Granted literature
- US20140045303A1 CONTACTS-FIRST SELF-ALIGNED CARBON NANOTUBE TRANSISTOR WITH GATE-ALL-AROUND Public/Granted day:2014-02-13
Information query
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