Method for fabricating a semiconductor device

Invention Grant

US08741759B2 Method for fabricating a semiconductor device 有权

Title translation: 半导体器件的制造方法

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Patent Title: Method for fabricating a semiconductor device
Patent Title (中): 半导体器件的制造方法
Application No.: US13672313

Application Date: 2012-11-08
Publication No.: US08741759B2

Publication Date: 2014-06-03
Inventor: Yu-Lien Huang
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agent Steven H. Slater
Main IPC: H01L21/3205
IPC: H01L21/3205 ; H01L21/20 ; H01L21/31

Abstract:

A method for fabricating a semiconductor device is disclosed. The method includes forming a gate stack over a substrate, forming spacers adjoining opposite sidewalls of the gate stack, forming a sacrificial layer adjoining the spacers, removing a portion of the sacrificial layer, removing a portion of the spacers to form a recess cavity below the left spacers. Then, a strain feature is formed in the recess cavity. The disclosed method provides an improved method by providing a space between the spacer and the substrate for forming the strained feature, therefor, to enhance carrier mobility and upgrade the device performance.

Abstract(Chinese):

公开了一种制造半导体器件的方法。该方法包括在衬底上形成栅极叠层，形成与栅极叠层的相对侧壁相邻的间隔物，形成邻接间隔物的牺牲层，去除牺牲层的一部分，去除一部分间隔物以形成下面的凹陷腔左垫片。然后，在凹腔中形成应变特征。所公开的方法通过在间隔物和衬底之间提供形成应变特征的空间来提供改进的方法，从而增强载体移动性并提高装置性能。

Public/Granted literature

US20140127893A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2014-05-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）