Invention Grant
- Patent Title: Method of manufacturing semiconductor device including first conductive pattern and second conductive pattern having top surface which decreases in height
- Patent Title (中): 制造半导体器件的方法包括第一导电图案和具有高度降低的顶表面的第二导电图案
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Application No.: US13494728Application Date: 2012-06-12
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Publication No.: US08741760B2Publication Date: 2014-06-03
- Inventor: Hikaru Kokura
- Applicant: Hikaru Kokura
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-280101 20071029
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A semiconductor device has a semiconductor substrate, a plurality of first conductive patterns, a second conductive pattern having a top surface of which stepwisely or gradually decreases in height in a direction from a side facing the first conductive pattern toward an opposite side, a first insulation film formed over the plurality of first conductive patterns and the second conductive pattern, and a third conductive pattern formed over the first insulation film.
Public/Granted literature
- US20120258586A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2012-10-11
Information query
IPC分类:
