Invention Grant
US08741772B2 In-situ nitride initiation layer for RRAM metal oxide switching material
有权
用于RRAM金属氧化物开关材料的原位氮化物引发层
- Patent Title: In-situ nitride initiation layer for RRAM metal oxide switching material
- Patent Title (中): 用于RRAM金属氧化物开关材料的原位氮化物引发层
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Application No.: US13398271Application Date: 2012-02-16
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Publication No.: US08741772B2Publication Date: 2014-06-03
- Inventor: Albert Lee
- Applicant: Albert Lee
- Applicant Address: US CA San Jose JP Tokyo US CA Milpitas
- Assignee: Intermolecular, Inc.,Kabushiki Kaisha Toshiba,SanDisk 3D LLC
- Current Assignee: Intermolecular, Inc.,Kabushiki Kaisha Toshiba,SanDisk 3D LLC
- Current Assignee Address: US CA San Jose JP Tokyo US CA Milpitas
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/44 ; H01L21/469 ; H01L21/00 ; H01L29/00 ; H01L47/00 ; H01L29/02 ; H01L29/04 ; H01L29/06
Abstract:
A resistive memory device having an in-situ nitride initiation layer is disclosed. The nitride initiation layer is formed above the first electrode, and the metal oxide switching layer is formed above the nitride initiation layer to prevent oxidation of the first electrode. The nitride initiation layer may be a metal nitride layer that is formed by atomic layer deposition in the same chamber in which the metal oxide switching layer is formed. The nitride initiation layer and metal oxide switching layer may alternatively be formed in a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.
Public/Granted literature
- US20130214231A1 IN-SITU NITRIDE INITIATION LAYER FOR RRAM METAL OXIDE SWITCHING MATERIAL Public/Granted day:2013-08-22
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