Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US13944344Application Date: 2013-07-17
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Publication No.: US08741779B2Publication Date: 2014-06-03
- Inventor: Tadahiro Ohmi , Kazuhide Ino , Takahiro Arakawa
- Applicant: ROHM Co., Ltd. , Tadahiro Ohmi
- Applicant Address: JP Kyoto-shi JP Sendai-shi
- Assignee: ROHM Co., Ltd.,Tadahiro Ohmi
- Current Assignee: ROHM Co., Ltd.,Tadahiro Ohmi
- Current Assignee Address: JP Kyoto-shi JP Sendai-shi
- Agency: Arent Fox LLP
- Priority: JP2000-156535 20000526
- Main IPC: C23C16/511
- IPC: C23C16/511 ; H05H1/24 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22

Abstract:
A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4≦D≦1.3×n/4 (n being a natural number).
Public/Granted literature
- US20130302918A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2013-11-14
Information query
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